POWER MOSFET. IRFN130SMD Datasheet

IRFN130SMD MOSFET. Datasheet pdf. Equivalent

Part IRFN130SMD
Description N-CHANNEL POWER MOSFET
Feature www.DataSheet4U.com IRFN130SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in ..
Manufacture Seme LAB
Datasheet
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IRFN130SMD
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IRFN130SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
2
Pad 1 – Source
SMD1
Pad 2 – Drain
Pad 3 – Gate
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
100V
11A
0.19W
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
* Also available as IRF130SM with Pin1(Source) and Pin3 (Gate) reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
11A
ID Continuous Drain Current @ Tcase = 100°C
7A
IDM Pulsed Drain Current
44A
PD Power Dissipation @ Tcase = 25°C
45W
Linear Derating Factor
0.36W/°C
TJ , Tstg
RqJC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
–55 to 150°C
2.8°C/W max.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 7/00



IRFN130SMD
www.DataSheet4U.com
IRFN130SMD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
ID = 7A
ID = 11A
ID = 250mA
IDS = 7A
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg Total Gate Charge
VGS = 10V
ID = 11A
VDS = 0.5BVDSS
Qgs Gate – Source Charge
ID = 11A
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
td(on)
tr
td(off)
tf
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 50V
ID = 11A
RG = 7.5W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current
VSD Diode Forward Voltage
IS = 11A
VGS = 0
TJ = 25°C
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 11A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
LS Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
100
2
3
12.8
1.0
3.8
Typ.
0.1
650
240
44
8.7
8.7
Max. Unit
V
V/°C
0.19
0.22
4
25
250
100
-100
W
V
S((WW)
mA
nA
pF
28.5 nC
6.3
nC
16.6
30
75
ns
40
45
11
A
43
1.5 V
300 ns
3 mC
nH
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 7/00





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