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IRFN140SMD Dataheets PDF



Part Number IRFN140SMD
Manufacturers Seme LAB
Logo Seme LAB
Description N-CHANNEL POWER MOSFET
Datasheet IRFN140SMD DatasheetIRFN140SMD Datasheet (PDF)

www.DataSheet4U.com LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRFN140SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 100V 13.9A 0.077W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMA.

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www.DataSheet4U.com LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRFN140SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 100V 13.9A 0.077W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES SMD1 – Surface Mount Package Pad 1 – Source Pad 2 – Drain Pad 3 – Gate Note: IRFxxxSM also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ–PCB Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) 22A 13.9A 88A 75W 0.6W/°C 250mJ 5.5V/ns –55 to 150°C 300°C 1.67°C/W 4°C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 0.8mH , RG = 25W , Peak IL = 22A , Starting TJ = 25°C 3) @ ISD £ 22A , di/dt £ 170A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 9.1W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 www.DataSheet4U.com LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage SEME IRFN140SMD Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 1 Min. 100 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain – Source On–State Resistance 1 Reference to 25°C ID = 13.9A ID = 22A ID = 250mA IDS = 13.9A VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 22A 1 0.13 0.077 0.125 2 9.1 25 250 100 –100 1660 550 120 4 V / °C W V (W) S(W VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance VDS ³ 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate – Source Charge 1 Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time mA nA pF ID = 22A 30 2.


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