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IRFN150 Dataheets PDF



Part Number IRFN150
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET
Datasheet IRFN150 DatasheetIRFN150 Datasheet (PDF)

PD - 91547C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) IRFN150 0.07 Ω ID 34A IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MO.

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PD - 91547C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) IRFN150 0.07 Ω ID 34A IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. SMD-1 Features: n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Surface Mount n Dynamic dv/dt Rating n Light-weight Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page www.irf.com 34 21 136 150 1.2 ±20 150 34 15 5.5 -55 to 150 300(for 5 seconds) 2.6 (Typical) Units A W W/°C V mJ A mJ V/ns oC g 1 1/28/02 IRFN150 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 100 — — — 2.0 9.0 — — IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — Typ Max Units —— V 0.13 — V/°C Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA — 0.07 — 0.081 — 4.0 —— — 25 — 250 — 100 — -100 — 125 — 22 — 65 — 35 — 190 — 170 — 130 4.0 — 3700 1100 200 — — — Ω V S( ) µA nA nC ns nH pF Ω VGS = 10V, ID = 21A ➃ VGS = 10V, ID = 34A VDS = VGS, ID = 250µA VDS > 15V, IDS = 21A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID = 34A VDS = 50V VDD = 50V, ID = 34A, VGS =10V, RG = 2.35Ω Measured from the center of drain pad to center of source pad. VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — 34 136 A VSD Diode Forward Voltage — — 1.8 V trr Reverse Recovery Time — — 500 nS QRR Reverse Recovery Charge — — 2.9 µC Tj = 25°C, IS = 34A, VGS = 0V ➃ Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs VDD ≤ 30V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — 0.83 °C/W — 3.0 — Test Conditions Soldered to a copper-clad PC board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFN150 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFN150 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 13a & b Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com Fig 9. Maximum Drain Current Vs. Case Temperature IRFN150 VDS VGS RG RD D.U.T. 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % +-V D D Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFN150 15V VDS L D R IV E R RG 120V tp D.U .T. IA S 0.01Ω + - VDD A Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 25V Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive.


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