Document
PD - 91547C
POWER MOSFET SURFACE MOUNT(SMD-1)
Product Summary
Part Number RDS(on)
IRFN150
0.07 Ω
ID 34A
IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592
100V, N-CHANNEL
HEXFET® MOSFETTECHNOLOGY
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
SMD-1
Features:
n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Surface Mount n Dynamic dv/dt Rating n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂
TJ TSTG
Operating Junction Storage Temperature Range Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
34 21 136 150 1.2 ±20 150 34 15 5.5 -55 to 150
300(for 5 seconds) 2.6 (Typical)
Units
A
W W/°C
V mJ A mJ V/ns
oC
g
1
1/28/02
IRFN150
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage
RDS(on)
Static Drain-to-Source On-State Resistance
VGS(th) gfs IDSS
Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min 100 —
— — 2.0 9.0 — —
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
Typ Max Units —— V 0.13 — V/°C
Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA
— 0.07 — 0.081 — 4.0 —— — 25 — 250
— 100 — -100 — 125 — 22 — 65 — 35 — 190 — 170 — 130 4.0 —
3700 1100 200
— — —
Ω V S( ) µA
nA nC
ns
nH
pF
Ω
VGS = 10V, ID = 21A ➃ VGS = 10V, ID = 34A VDS = VGS, ID = 250µA VDS > 15V, IDS = 21A ➃ VDS= 80V ,VGS=0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V VGS = -20V VGS =10V, ID = 34A VDS = 50V
VDD = 50V, ID = 34A, VGS =10V, RG = 2.35Ω
Measured from the center of drain pad to center of source pad.
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS ISM
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀
— —
— —
34 136
A
VSD Diode Forward Voltage
— — 1.8 V
trr Reverse Recovery Time
— — 500 nS
QRR Reverse Recovery Charge
— — 2.9 µC
Tj = 25°C, IS = 34A, VGS = 0V ➃ Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs
VDD ≤ 30V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB
Junction-to-Case Junction-to-PC board
Min Typ Max Units — — 0.83
°C/W — 3.0 —
Test Conditions Soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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IRFN150
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics www.irf.com
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRFN150
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
13a & b
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
4
Fig 8. Maximum Safe Operating Area www.irf.com
Fig 9. Maximum Drain Current Vs. Case Temperature
IRFN150
VDS VGS RG
RD D.U.T.
10V
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com
5
IRFN150
15V
VDS
L
D R IV E R
RG
120V tp
D.U .T. IA S
0.01Ω
+ - VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
25V
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS Fig 12b. Unclamped Inductive.