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IRFN250SMD

Seme LAB

N-CHANNEL POWER MOSFET

www.DataSheet4U.com IRFN250SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 )...


Seme LAB

IRFN250SMD

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www.DataSheet4U.com IRFN250SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 200V 14A 0.100W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT HIGH PACKING DENSITIES SMD PACKAGE Pad 1 – Source Pad 2 – Drain Pad 3 – Gate Note: IRFxxxSM also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ–PCB Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) 22A 14A 88A 100W 0.8W/°C 500mJ 5.0V/ns –55 to 150°C 300°C 1.25°C/W 3°C/W Notes 1) Pulse Test: Pulse Width £ 300m...




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