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Provisional Data Sheet No. PD-9.1417
REPETITIVE AVALANCHE AND dv/dt RATED
IRFN3710
N-CHANNEL
HEXFET® TRANSISTOR
100 Volt, 0.028Ω , HEXFET
Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The Surface Mount Device 1 (SMD-1) package represents anothther step in the continual evolution of surface mount technology. Designed to be a close replacement for the TO-3 package, the SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electical performance.
Product Summary
Part Number IRFN3710 BVDSS 100V RDS(on) 0.028Ω ID 45A
Features:
n n n n n n n n
Surface Mount Small Footprint Alternative to TO-3 Package Hermetically Sealed Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current ID @ VGS = 10V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy I AR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction TSTG Storage Temperature Range Package Mounting Surface Temperature Weight 300 (for 5 sec.) 2.6 (typical)
IRFN3710
45 28 180 125 1.0 ±20 690 27 12.5 5.0 -55 to 150
Units A
W W/K
V mJ A mJ V/ns
oC
g
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IRFN3710 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/ ∆TJ Temp. Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current
Min.
100 — — — 2.0 24 — — — — — — — — — — — —
Typ. Max. Units
— — V
Test Conditions
I GSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
VGS = 0V, ID = 1.0 mA 0.120 — V/°C Reference to 25°C, ID = 1.0 mA — 0.028 VGS = 12V, I D =28A Ω — 0.032 VGS = 12V, I D = 45A — 4.0 V VDS = VGS , ID = 250 mA — — S( ) VDS > 15V, IDS = 28A — 25 VDS =0.8 x Max Rating,V GS=0V µA — 250 VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C — 100 VGS = 20V nA — -100 VGS = -20V — 190 VGS =10V, ID =45 A — 26 nC VDS = Max. Rating x 0.5 — 82 14 — VDD = 50V, ID =45A, 59 — ns R G = 4.3 Ω 58 — 48 8.7 — —
Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Modified MOSFET symbol showing the internal inductances.
LS
Internal Source Inductance
—
8.7
—
nH
Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
3000 640 330
— — —
pF
VGS = 0V, VDS = 25V f = 1.0 MHz
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IRFN3710 Device
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
— — — — 45 180 A
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
VSD Diode Forward Voltage t rr Reverse Recovery Time Q RR Reverse Recovery Charge ton Forward Turn-On Time
— — —
— — —
1.3 210 1.7
V ns µC
Tj = 25°C, IS = 45A, VGS = 0V Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs VDD ≤ 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC Board
Min. Typ. Max. Units Test Conditions
— — — TBD 1.0 — K/W
Soldered to a copper-clad PC board
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 25V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 45A, VGS = 10V, 25 ≤ R G ≤ 200Ω
ISD ≤ 45A, di/dt ≤ 460 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W W/K = W/°C
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IRFN3710 Device
Case Outline and Dimensions — SMD-1
All dimensions in millimeters (inches)
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