DatasheetsPDF.com

IRFN9140

International Rectifier

POWER MOSFET N-CHANNEL

Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1553 HEXFET® POWER MOSFE...



IRFN9140

International Rectifier


Octopart Stock #: O-605184

Findchips Stock #: 605184-F

Web ViewView IRFN9140 Datasheet

File DownloadDownload IRFN9140 PDF File







Description
Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1553 HEXFET® POWER MOSFET -100 Volt, 0.20Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance. IRFN9140 N-CHANNEL Product Summary Part Number IRFN9140 BVDSS -100V RDS(on) 0.20Ω ID -18A Features: s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ V GS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)