KMMR18R8CC

www.DataSheet4U.com KMMR16R84(6/8/C/G)C KMMR18R84(6/8/C/G)C Overview 4/6/8/12/16d 4/6/8/12/16d RIMMTM RIMMTM Preliminary Module with 128Mb RDRAMs Module with 144Mb RDRAMs Key Timing Parameters/Part Numbers The following table lists the frequency and latency bins available from RIMM modules. An optional ‘ S’ designator instead of ‘R’ followed by ‘ hyphen(-)’ indicates low power modules. TABLE 1. Part Number by Freq. & Latency Speed Organization I/O Binning Freq. MHz -RG6 -RK8 -RM8 48M x 16/18 -RG6 -RK8 -RM8 64M x 16/18 -RG6 -RK8 -RM8 600 800 800 600 800 800 600 800 800 600 800 800 600 800 800 The Rambus® RIMM™ module is a general purpose highperformance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. The Rambus RIMM module consists of 128Mb/144Mb Direct Rambus DRAM devices. These are extremely highspeed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz or 800MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95...