SD1420-01

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 0.9 W MIN. 9.5 dB GAIN DESCRIPTION: The SD1420-01 is a gold metallized epitaxial silicon NPN planar transistor designed for high-linearity Class A operation Cellular Base Station applications. The SD1420-01 is also available in a stud package as the SD1420. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 40 28 3.5 .250 7 + 200 –55 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 20 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. www.DataSheet4U.com SD1420-01 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Units BVCBO BVCEO BVEBO ICES hFE IC = 1 mA IC = 1 mA IE = 1 mA VCB = 24 V VCE = 5 V IC = .1 A 40 28 3.5 .5 20 120 V V V mA DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Units POUT GP COB f = 960 MHz f = 960 MHz f = 1 MHz VCE = 24 V V...