SD1429

www.DataSheet4U.com SD1429 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The SD1429 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes “Tuned Q” technology which consists of an input matching network on the base to achieve optimum gain and broadband characteristics. IMPORTANT: For the most current data, visit: http://www.advancedpower.com 470 MHz 12.5 Volts Common Emitter POUT = 12 W Min. GP = 7.8 dB Gain APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS UHF Mobile Applications Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 16 36 4.0 3.4 37.5 +200 -65 to +150 Unit V V V V A W °C °C .500 6LFL (M111) EPOXY SEALED PIN CONNECTION THERMAL DATA 4 1 4.6 °C/W RTH(j-c) Junction-Case Thermal Resistance SD1429 2 3 1. Collector 2. Emitter 3. Base 4. Emitter Copyright  2000 MSCXXXX.PDF 12-05-2002 www.DataSheet4U.com SD1429 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) Symbol BVCES BVCEO BVEBO ICBO hFE IC = 200 mA IC = 200 mA IE = 4 mA VCB =15 V VCE = 5 V Test Conditions VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA Min. 36 16 4.0 20 SD1429 Typ. Max. Units V V V mA 2.0 200 DYMANIC ELECTRICAL SPEC...