SPP07N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) ID 600 V 0.6 Ω 7.3 A PG-TO262 PG-TO220 2 P-TO220-3-1 123 Type SPP07N60S5 SPI07N60S5 Package PG-TO220 PG-TO262 Ordering Code Q67040-S4172 Q67040-S4328 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = - A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage Gate source voltage AC (f >1Hz) VGS VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 7.3 4.6 14.6 230 0.5 7.3 ...