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SPA07N65C3

Infineon Technologies

Cool MOS Power Transistor

SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra...


Infineon Technologies

SPA07N65C3

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Description
SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge V DS RDS(on) ID 650 V 0.6 Ω 7.3 A Periodic avalanche rated PG-TO220-3 PG-TO262-3-1 PG-TO220 Extreme dv/dt rated 2 High peak current capability Improved transconductance P-TO220-3-31 23 1 PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 23 1 Type SPP07N65C3 SPI07N65C3 SPA07N65C3 Package PG-TO220 PG-TO262-3 PG-TO220-3 Marking 07N65C3 07N65C3 07N65C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=1.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature ID ID puls EAS EAR IAR VGS VGS Ptot T...




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