SPP07N65C3, SPI07N65C3 SPA07N65C3
CoolMOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra...
SPP07N65C3, SPI07N65C3 SPA07N65C3
CoolMOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge
V DS RDS(on)
ID
650 V 0.6 Ω 7.3 A
Periodic avalanche rated
PG-TO220-3 PG-TO262-3-1 PG-TO220
Extreme dv/dt rated
2
High peak current capability Improved transconductance
P-TO220-3-31
23 1
PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
23 1
Type SPP07N65C3 SPI07N65C3 SPA07N65C3
Package PG-TO220 PG-TO262-3 PG-TO220-3
Marking 07N65C3 07N65C3 07N65C3
Maximum Ratings Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=1.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=2.5A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage
Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
ID
ID puls EAS
EAR
IAR VGS VGS Ptot T...