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MRF5174
NPN RF POWER TRANSISTOR
DESCRIPTION:
The MRF5174 is a Common Emitter Device Designed for ...
www.DataSheet4U.com
MRF5174
NPN RF POWER
TRANSISTOR
DESCRIPTION:
The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band.
PACKAGE STYLE .280 4L STUD
A 45°
C E B
FEATURES INCLUDE:
High Gain Gold Metallization Emitter Ballasting
B
E
D
C J
E F
I
MAXIMUM RATINGS
IC VCBO PDISS TJ TSTG θJC
O O
G H K DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 .640 / 16.26 .217 / 5.51 .285 / 7.24 MINIMUM
inches / mm
#8-32 UNC MAXIMUM
inches / mm
0.5 A 40 V 8.75 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 20 C/W
O O O O
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30
1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48
.255 / 6.48
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICBO hFE COB PG ηC
TC = 25 C
O
TEST CONDITIONS
IC = 1.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 2.0 W IC = 100 mA f = 1.0 MHz f = 400 MHz
MINIMUM TYPICAL MAXIMUM
40 28 3.5 500 20 120 5.0 12 50 13
UNITS
V V V µA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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