D1650

www.DataSheet4U.com 2SD1650 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PML CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 2.0A; IB = 0.4A f = 16KHz IF = 2.0A IC=2A,IB1=-IB2=0.4A,VCC=140V - MAX 1500 600 3.5 7.0 50 1.5 2.0 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -55 - MAX 1500 600 3.5 7.0 1.5 3 50 150 150 UNIT V V A A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector ...