P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2006/01/20 REVISED DATE :
GM2301
P-CHANNEL ENHANCEMENT MODE P...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/20 REVISED DATE :
GM2301
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 130m -2.6A
The GM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GM2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement *Surface Mount Device
Package Dimensions SOT-89
REF. A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF. G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Operating Junction and Storage Temperature Range
Ratings -20 ±12 -2.6 -2.1 -10 1.5 0.012 -55 ~ +150 Value 83.3
Unit V V A A A W W/
Thermal Data
Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W
GM2301
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ISSUED DATE :2006/01/20 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. -20 -0.5 Typ. -0.1 4.4 5.2 1.36 0.6 ...
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