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GM2301

GTM

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GM2301 P-CHANNEL ENHANCEMENT MODE P...


GTM

GM2301

File Download Download GM2301 Datasheet


Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GM2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 130m -2.6A The GM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GM2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Surface Mount Device Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Operating Junction and Storage Temperature Range Ratings -20 ±12 -2.6 -2.1 -10 1.5 0.012 -55 ~ +150 Value 83.3 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W GM2301 Page: 1/4 www.DataSheet4U.com ISSUED DATE :2006/01/20 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. -20 -0.5 Typ. -0.1 4.4 5.2 1.36 0.6 ...




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