ON2152

Reflective Photosensors (Photo Reflectors) www.DataSheet4U.com CNZ2152 (ON2152) Reflective photosensor Non-contact point SW, object sensing CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. 3.2±0.2 Unit: mm Mark for indicating LED side φ1.5 ■ Overview 8.0±0.2 3.5±0.2 1.0 -0.2 +0.1 16.0±0.3 14.0 -0.2 +0.1 φ2.2±0.2 1.0(typ.) ■ Features Fast response High sensitivity High SN ratio 10.0±0.2 φ0.9 -0.2 7.0 min. +0.1 ■ Applications 4-φ0.45 (10.0) (2.54) ■ Absolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse voltage emitting diode) Forward current Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation *2 Operating ambient temperature Storage temperature Symbol VR IF PD VCEO VECO IC PC T opr Tstg Rating 3 100 150 20 3 30 150 −25 to +85 −30 to + 100 Unit V mA mW V V mA mW °C °C Temperature Note) *1: Input power derating ratio is 2.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 2.0 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Forward voltage characteristics Reverse cu...