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ON2179 Dataheets PDF



Part Number ON2179
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Reflective photosensor
Datasheet ON2179 DatasheetON2179 Datasheet (PDF)

www.DataSheet4U.com Reflective Photosensors (Photo Reflectors) CNZ2179 (ON2179) Reflective Photosensor Unit : mm Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor is used as the light detecting element. 5.2 13.0 Long focal distance : 6 mm (typ.) Visible light cutoff resin is used (7.6) 1 (2-0.5) (2-0.5) (2.54) 4 Parameter Input (.

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www.DataSheet4U.com Reflective Photosensors (Photo Reflectors) CNZ2179 (ON2179) Reflective Photosensor Unit : mm Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor is used as the light detecting element. 5.2 13.0 Long focal distance : 6 mm (typ.) Visible light cutoff resin is used (7.6) 1 (2-0.5) (2-0.5) (2.54) 4 Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature *1 *2 Symbol Ratings VR IF PD*1 IC VCEO VECO PC*2 Topr Tstg 3 50 75 20 20 5 100 –25 to +80 –30 to +85 Unit V mA mW mA V V mW ˚C ˚C Reverse voltage (DC) 2 (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference Operating ambient temperature Storage temperature Input power derating ratio is 1.25 mW/˚C at Ta ≥ 25˚C. Output power derating ratio is 1.67 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO IC*1 IF = 50mA VR = 3V VCE = 10V 180 20 0.5 Conditions min typ 1.3 max 1.5 10 0.2 1500 Unit V µA µA µA µs V Collector current VCC = 5V, IF = 20mA, RL = 100Ω Transfer Response time tr*2 , tf*3 VCC = 10V, IC = 0.1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA *1 Transfer characteristics measurement circuit (Ambient light is shut off completely.) IC VCC *2 *3 IF Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value. 90% 10% tr tf ;; ;; ; ;; ; RL ;; ;; ; ; ;;; d = 5 mm Standard white paper (Reflective ratio 90%) Note) The part number in the parenthesis shows conventional part number. ; ;; ; 3 1 2 3 4 Pin connection Absolute Maximum Ratings (Ta = 25˚C) 10 min. Features 8.0 0.85max. 1 www.DataSheet4U.com CNZ2179 Reflective Photosensors (Photo Reflectors) IF , IC — Ta 60 60 IF — V F 1.6 Ta = 25˚C VF — Ta IF , IC (mA) 50 IF 50 IF = 50mA IF (mA) VF (V) 1.2 Forward current, collector current 10mA 40 40 Forward current Forward voltage 1mA 0.8 30 IC 30 20 20 0.4 10 10 0 – 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Forward voltage VF (V) Ambient temperature Ta (˚C ) IC — I F 10 2 VCE = 5V Ta = 25˚C 10 2 IC — VCE Ta = 25˚C 160 IC — Ta VCC = 5V IF = 20mA RL = 100Ω 120 IC (mA) 10 IC (mA) 10 1 1 IF = 30mA 20mA 10 –1 10mA Relative output current 10 2 Collector current Collector current IC (%) 80 10 –1 40 10 –2 10 –1 1 10 10 2 10 –2 10 –1 1 10 0 – 40 – 20 0 20 40 60 80 100 Forward current IF (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C ) ICEO — Ta 10 VCE = 10V 10 3 tr — IC VCC = 10V Ta = 25˚C 100 IC — d IC (%) Relative output current RL = 1kΩ 500Ω 100Ω 80 ICEO (µA) 1 10 2 tr (µs) 60 Dark current Rise time 10 –1 10 40 10 –2 1 20 10 –3 – 40 – 20 0 20 40 60 80 100 10 –1 10 –2 10 –1 1 10 0 VCC = 5V Ta = 25˚C RL = 100Ω IF = 20mA 0 4 8 12 16 Ambient temperature Ta (˚C ) Collector current IC (mA) Distance d (mm) 2 www.DataSheet4U.com Caution for Safety Gallium arsenide material (GaAs) is used in this product. Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. DANGER Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (su.


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