C8050

www.DataSheet4U.com Semiconductor STC8050N NPN Silicon Transistor Descriptions High current application Radio in class B push-pull operation Feature Complementary pair with STA8550N Ordering Information Type NO. STC8050N Marking STC8050 Package Code TO-92N Outline Dimensions unit : mm 4.20~4.40 4.20~4.40 2.25 Max. 0.52 Max. 13.50~14.50 0.90 Max. 1.27 Typ. 2.14 Typ. 1 2 3 3.55 Typ 3.09~3.29 0.40 Max. PIN Connections 1. Emitter 2. Base 3. Collector KSD-T0C007-001 1 STC8050N Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range (Ta=25°C) Symbol VCBO VCEO VEBO IC IE PC TJ Tstg Rating 30 25 6 800 -800 500 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO ICBO IEBO hFE* VCE(sat) VBE fT Cob Test Condition IC=1mA, IB=0 VCB=30V, IE=0 VEB=6V, IC=0 VCE=1V, IC=50mA IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=5V, IC=10mA VCB=10V, IE=0 Min. Typ. Max. 25 85 0.85 180 19 50 50 300 0.5 1.2 - Unit V nA nA V V MHz pF * : hFE Rank / B : 85~160, C : 120~200, D : 160~300 KSD-T0C007-001 2 STC8050N Electrical Characteristic Curves Fig. 1 Pc - Ta F...