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APTGT100DU60TG Dataheets PDF



Part Number APTGT100DU60TG
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description IGBT Power Module
Datasheet APTGT100DU60TG DatasheetAPTGT100DU60TG Datasheet (PDF)

www.DataSheet4U.com APTGT100DU60TG Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 VCES = 600V IC = 100A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Q2 G2 E1 E2 NTC1 E NTC2 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated.

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www.DataSheet4U.com APTGT100DU60TG Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 VCES = 600V IC = 100A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Q2 G2 E1 E2 NTC1 E NTC2 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Max ratings 600 150 100 200 ±20 340 200A @ 550V Unit V A APTGT100DU60TG – Rev 1 June, 2006 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT100DU60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A R G = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A R G = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C R G = 3.3Ω Tj = 150°C Min Typ 6100 390 190 115 45 225 55 130 50 300 70 0.4 0.875 2.5 3.5 Max Unit pF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V IF = 100A VGE = 0V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Min 600 Typ Max 250 500 Unit V µA A di/dt =2000A/µs mJ www.microsemi.com 2-5 APTGT100DU60TG – Rev 1 June, 2006 IF = 100A VR = 300V 100 1.6 1.5 125 220 4.7 9.9 1.1 2.4 2 V ns µC APTGT100DU60TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85   T − T    25  T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.44 0.77 175 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 2.5 SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT100DU60TG – Rev 1 June, 2006 APTGT100DU60TG Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 200 175 150 IC (A) T J=150°C T J = 150°C VGE =19V 200 175 150 IC (A) TJ=25°C T J=125°C 125 100 75 50 25 0 0 0.5 1 T J=25°C 125 100 75 50 25 0 VGE =13V VGE =15V V GE=9V 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 200 175 150 125 IC (A) 100 75 50 25 0 5 Transfert Characteristics 7 TJ =25°C Energy losses vs Collector Current 6 5 E (mJ) 4 3 2 Er VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C Eoff TJ=125°C T J=150°C TJ =25°C 1 0 11 12 0 25 50 75 Eon 6 7 8 9 10 100 125 150 175 200 IC (A) VGE (V) Switchin.


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