IGBT Power Module
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APTGT100H170G
Full - Bridge Trench + Field Stop IGBT® Power Module
VBUS Q1 G1 Q3 G3
VCES = 1700V I...
Description
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APTGT100H170G
Full - Bridge Trench + Field Stop IGBT® Power Module
VBUS Q1 G1 Q3 G3
VCES = 1700V IC = 100A @ Tc = 80°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant
E1
OUT1 OUT2
E3
Q2 G2
Q4 G4
E2
E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS G2 E2
E3 G3 OUT2
E4 G4
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Reverse Bias Safe Operating Area
200A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT100H170G – Rev 1
July, 2006
Max ratings 1700 150 100 200 ±20 ...
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