High power PNP epitaxial planar bipolar transistor
Description
www.DataSheet4U.com
2STA1962
High power PNP epitaxial planar bipolar transistor
Preliminary Data
Features
■ ■ ■ ■
High breakdown voltage VCEO > -230V Complementary to 2STC5242 Fast-switching speed Typical fT= 30MHz
3 2 1
Application
Audio power amplifier
TO-3P
Description
This device is a PNPtransistor manufactured using new BiT-LA (Bipolar Transistor ...
