KMB7D1DP30QA

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB7D1DP30QA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D P G H T L FEATURES VDSS=-30V, ID=-7.1A Drain-Source ON Resistance RDS(ON)=25m (Max.) @ VGS=-10V RDS(ON)=41m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design 1 4 8 5 B1 B2 A DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch -30 22 -7.1 ID -5.7 IDP IS PD 0.7 Tj Tstg RthJA 150 -55 150 110 /W -40 -1.7 1.1 W A A UNIT V V FLP-8 DC@TA=25 Drain Current DC@TA=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : Surface Mounted on FR4 Board, t 10sec. KMB7D1DP 30QA 705 PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 1 8 7 6 5 2 7 2 3 3 6 4 5 4 2007. 4. 17 Revision No : 0 1/5 KMB7D1DP30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic Input Capaclitance Ouput ...