MOS FET Power Amplifier Module
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PF1010A
MOS FET Power Amplifier Module for P/C LAN
ADE-208-106A (Z) 2nd Edition July 1996 Features...
Description
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PF1010A
MOS FET Power Amplifier Module for P/C LAN
ADE-208-106A (Z) 2nd Edition July 1996 Features
Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Loe voltage operation: 6 V Low power control current: 300 µA Typ
Pin Arrangement
RF-E 4 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
5 5 1
3 2 5
PF1010A
Internal Diagram and External Circuit
Pin1 Pin
Pin2 VAPC
Pin3 VDD
Pin4 Pout
Z1
C1
FB1
C3
C4
FB2
C2
Z2
Pin
VAPC
VDD
Pout
C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = C4 = 4.7 µF (Tantalum) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 12 2 3 20 –30 to +100 –30 to +100 Unit V A V mW °C °C
2
PF1010A
Electrical Characteristics (Tc = 25°C)
Item Drain cutoff current Total efficiency Symbol I DS ηT Min — 39 — — Max 100 — –30 –30 3 — –35 Unit µA % dBc dBc — W dBm — f = 806, 824 MHz, Pin = 2 dBm, VDD = 4.8 V, VAPC = 4 V, Rg = RL = 50 Ω f = 806, 824 MHz, Pin = 1 mW, VDD = 6 V, VAPC = 0.5 V, Rg = RL = 50 Ω f = 806 to 824 MHz, Pin = 1 mW, VDD = 4.8 to 7.2 V, Pout ≤ 1.4 W, Rg = 50 Ω, Load VSWR = 3:1 All phase angles Test Condition VDD = 12 V, VAPC = 0 V, Rg = RL = 50 Ω f = 806, 824 MHz, Pin = 1 mW, VDD = 6 V, Rg = RL = 50 Ω, Pout = 1.4 W (at APC controlled),
2...
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