DatasheetsPDF.com

STP38N06

STMicroelectronics

N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR

www.DataSheet4U.com STP38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TY...


STMicroelectronics

STP38N06

File Download Download STP38N06 Datasheet


Description
www.DataSheet4U.com STP38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P38N06 s s s s s s s s V DSS 60 V R DS(on) < 0.03 Ω ID 38 A (*) TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 1 2 3 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P t ot dV/dt(1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope St orage Temperature Max. Operating Junction Temperature o o o Value 60 60 ± 20 38 26 152 90 0.6 7 -65 to 175 175 Uni t V V V A A A W W/ o C V/ ns o o C C () Pulse width limited by safe operating area March 1996 1/11 www.DataSheet4U.com STP38N06 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 1.66 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)