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DF2S5.6FS
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S5.6FS
Diodes for Protecting against ESD
The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Lead (Pb) - free
CATHODE MARK
Unit in mm
0.6±0.05 0.1
Zener voltage corresponds to E24 series.
A
Characteristic Power dissipation Junction temperature Storage temperature range
Symbol P Tj Tstg
Rating 150* 150 −55~150
Unit mW °C °C
0.1
0.07M
A
0.2 ±0.05
0.8±0.05
0.1±0.05
*: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.
0.48+0.02 -0.03
Pad Dimension(Reference)
0.85 0.26 0.21
Unit : mm fSC JEDEC JEITA TOSHIBA ― ― 1-1L1A
Weight: 0.0006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Zener voltage Dynamic impedance Reverse current Total capacitance (between Cathode and Anode) Symbol VZ ZZ IR CT Test Condition IZ = 5mA IZ = 5mA VR = 3.5V VR = 0 V, f = 1 MHz Min 5.3 ― ― ― Typ. 5.6 ― ― 40 Max 6.0 30 1 ― Unit V Ω μA pF
Guaranteed Level of ESD Immunity
Test Condition IEC61000-4-2 (Contact discharge) ESD Immunity Level
Marking
Equivalent Circuit (Top View)
.6
±30kV
Criterion: No damage to device elements
1
2005-08-29
1.0±0.05
Maximum Ratings (Ta = 25°C)
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DF2S5.6FS
IZ - VZ
CT - VR
100
100 ZENER CURRENT IZ (mA) Ta=25°C 10
TOTAL CAPACITANCE CT(pF)
f=1MHz Ta=25°C
1
10
0 0.1
0.01 0 0 1 2 3 4 5 6 7 8 ZENER VOLTAGE VZ (V) 9 10
1 0 1 2 3 4 5 REVERSE VOLTAGE VR(V) 6
2
2005-08-29
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DF2S5.6FS
3
2005-08-29
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