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2S4M

NEC

THYRISTORS 2 A HIGH-SPEED SWITCHING SCR

www.DataSheet4U.com DATA SHEET THYRISTORS 2S2M, 2S4M 2 A HIGH-SPEED SWITCHING SCR The 2S2M and 2S4M are P-gate fully...


NEC

2S4M

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www.DataSheet4U.com DATA SHEET THYRISTORS 2S2M, 2S4M 2 A HIGH-SPEED SWITCHING SCR The 2S2M and 2S4M are P-gate fully diffused mold SCRs with an average on-current of 2 A. The repeat peak off-voltages (and reverse voltages) are 200 V and 400 V. PACKAGE DRAWING (UNIT: mm) FEATURES This transistor is designed for high-speed switching and is deal for use in commercial frequencies, high-frequency pulse applications, and inverter applications. This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible. Employs flame-retardant epoxy resin (UL94V-0). APPLICATIONS Consumer electronic euipments, ignitors of devices for light indutry, inverter, and solenoid valve drives Electrode connection <1>Cathode <2>Anode <3>Gate Standard weight: 1.4 *TC test bench-mark ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Non-repetitive peak reverse voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak off-voltage Average on-state current Surge on-state current High-frequency peak on-state current Fusing current Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward current Peak gate reverse voltage Junction temperature Storage temperature Symbol VRSM VDSM VRRM VDRM IT(AV) ITSM ITRM ∫ it dt dIT/dt PGM PG(AV) IFGM VRGM Tj Tstg 2 2S2M ...




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