NPT3 IGBT
IGBT with Reverse Blocking capability
IXRH 40N120
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.
C
TO-247 AD
G
G
...
Description
IGBT with Reverse Blocking capability
IXRH 40N120
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.
C
TO-247 AD
G
G
C E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
VGE(th) I
CES
IGES QGon
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C
Maximum Ratings
±1200
V
± 20
V
55
A
35
A
80
A
600
V
300
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
IC = 2 mA; VGE = VCE
V CE
=
V; CES
V GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
VCE = 120V; VGE = 15 V; IC = 35 A
2.3 2.7 V
2.8
V
4
8V
50 µA
3.0
mA
500 nA
90
nC
Features
IGBT with NPT (non punch through) structure
reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery
positive temperature coefficient of saturation voltage
Epoxy of TO-247 package meets UL 94V-0
Applications
converters requiring reverse blocking capability:
- current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching
in the main current path
0526
IXYS reserves the right to change limits, test conditions and dimensions.
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