IXRH40N120

www.DataSheet4U.com IXRH 40N120 IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G C E G E C (TAB) C = Collector, TAB = Collector G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings ± 1200 ± 20 55 35 80 600 300 V V A A A V W Features IGBT with NPT (non punch through) structure reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage Epoxy of TO-247 package meets UL 94V-0 Applications converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.8 4 3.0 500 90 2.7 8 50 V V V µA mA nA nC VCE(sat) VGE(th) ICES IGES QGon IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V VCE = 120V; VGE = 15 V; IC = 35 A IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623...