SGB02N60

www.DataSheet4U.com SGP02N60, Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGB02N60 SGD02N60 C G E P-TO-252-3-1 (D-PAK) (TO-252AA) P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP02N60 SGB02N60 SGD02N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 2 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 2A VCE(sat) 2.2V Tj 150°C Package TO-220AB TO-263AB TO-252AA(DPAK) Ordering Code Q67040-S4504 Q67040-S4505 Q67041-A4707 Symbol VCE IC Value 600 6.0 2.9 Unit V A ICpul s VGE EAS 12 12 ±20 13 V mJ tSC Ptot 10 30 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 www.DataSheet4U.com SGP02N60, Thermal Resistance Parameter Characteristic IGBT thermal ...