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SGP06N60, SGD06N60,
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
SGB06N60 SGU06N60
C
G
E
P-TO-251-3-1 (I-PAK) (TO-251AA)
P-TO-252-3-1 (D-PAK) (TO-252AA)
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP06N60 SGB06N60 SGD06N60 SGU06N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 6 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C
1)
VCE 600V
IC 6A
VCE(sat) 2.3V
Tj 150°C
Package TO-220AB TO-263AB TO-252AA(DPAK) TO-251AA(IPAK)
Ordering Code Q67040-S4450 Q67040-S4448 Q67041-A4709 Q67040-S4449
Symbol VCE IC
Value 600 12 6.9
Unit V A
ICpul s VGE EAS
24 24 ±20 34 V mJ
tSC Ptot
10 68
µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
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SGP06N60, SGD06N60,
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB
1)
SGB06N60 SGU06N60
Max. Value Unit
Symbol
Conditions
RthJC RthJA RthJA TO-251AA TO-220AB TO-252AA TO-263AB
1.85 75 62 50 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 6 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 25 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 Typ. 2.0 2.3 4 4.2 350 38 23 32 7 60 max. 2.4 2.8 5
Unit
V
µA 20 700 100 420 46 28 42 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 6 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =6 A V G E = 15 V T O - 22 0A B V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, T j ≤ 15 0 ° C
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1) 2
2
Jul-02
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SGP06N60, SGD06N60,
Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G =50Ω , 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. Symbol Conditions min.
SGB06N60 SGU06N60
Value typ. 25 18 220 54 0.110 0.105 0.215 max. 30 22 264 65 0.127 0.137 0.263 mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C =6 A , V G E = 0/ 15 V , R G = 50 Ω , 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. 24 17 248 70 0.167 0.153 0.320 29 20 298 84 0.192 0.199 0.391 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L σ an d Stray capacity C σ due to dynamic test circuit in Figure E. 3 Jul-02
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SGP06N60, SGD06N60,
Ic
30A
SGB06N60 SGU06N60
t p =2 µ s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A 15 µ s
20A T C =80°C
50 µ s 1A 200 µ s 1ms DC
10A
T C =110°C
Ic
0A 10Hz
0.1A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 50Ω)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
15A 80W
60W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
10A
40W
5A
20W
0W 25°C
50°C
75°C
100°C
125°C
0A 25°C
50°C
75°C
100°C
125°C
TC, CASE TEMPERATU.