AP15N03P

www.DataSheet4U.com AP15N03P Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID TO-220 30V 80mΩ 15A Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 15 9 50 28 0.22 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200218032 www.DataSheet4U.com AP15N03P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 ` - Typ. 0.037 Max. Units 80 100 3 1 25 ±100 V V/℃ mΩ m...