M58LT256JSB

www.DataSheet4U.com M58LT256JST M58LT256JSB 256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O Buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Random access: 85 ns – Asynchronous Page Read mode Synchronous Burst Read Suspend Programming time – 5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 16 Mbit banks – Parameter Blocks (top or bottom location) Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Block protection – All blocks protected at Power-up – Any combination of blocks can be protected with zero latency – Absolute Write Protection with VPP = VSS Security – Software security features – 64 bit unique device number – 2112 bit user programmable OTP Cells Common Flash Interface (CFI) 100 000 program/erase cycles per block ■ ■ BGA ■ TBGA64 (ZA) 10 x 13 mm ■ ■ ■ Electronic signature – Manufacturer Code: 20h – Top Device Codes: M58LT256JST: 885Eh – Bottom Device Codes M58LT256JSB: 885Fh TBGA64 package – ECOPACK® compliant ■ ■ ■ ■ ■ June 2007 Rev 2 1/106 www.st.com 1 www.DataSheet4U.com Contents M58LT256JST, M58LT256JSB Contents 1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....