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K1606 Dataheets PDF



Part Number K1606
Manufacturers Matsushita Electric
Logo Matsushita Electric
Description 2SK1606
Datasheet K1606 DatasheetK1606 Datasheet (PDF)

Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage .

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Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±8 ±16 130 50 2 150 −55 to +150 Unit V V A A mJ 4.0 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C 1 2 W °C °C 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 3 Single pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.1mH, ID = 8A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A VDS = 20V, VGS = 0, f = 1MHz 3 450 130 1 0.56 5 1300 160 70 VGS = 10V, ID = 4A VDD = 150V, RL = 37.5Ω 70 50 150 5 0.75 min typ max 0.1 ±1 Unit mA µA V mJ V Ω S pF pF pF ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) * Avalanche energy capacity test circuit L ID Gate VDS Drain Source C VDD PVS RGS 1 Power F-MOS FETs ID  VDS 16 14 12 10 8 6V 6 4 2 0 0 10 20 PD=50W 30 40 50 60 5.5V 10 2SK1606 | Yfs |  ID Drain to source ON-resistance RDS(on) (Ω) 1.2 TC=25˚C 1.0 RDS(on)  ID VDS=25V TC=25˚C VGS=8V Forward transfer admittance |Yfs| (S) 15V 10V www.DataSheet4U.com TC=25˚C 8 Drain current ID (A) 7V 0.8 6 VGS=10V 15V 0.6 4 0.4 2 0.2 5V 0 0 4 8 12 16 20 24 0 0 4 8 12 16 20 24 Drain to source voltage VDS (V) Drain current ID (A) Drain current ID (A) ID  VGS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 VDS=25V TC=25˚C 10000 Ciss, Coss, Crss  VDS TC=25˚C 600 ton, tf, td(off)  ID VDD=150V VGS=10V TC=25˚C Switching time ton,tf,td(off) (ns) 3000 Ciss 500 Drain current ID (A) 1000 400 300 300 100 Coss 30 Crss 200 td(off) 100 ton tf 10 0 40 80 120 160 200 240 0 0 2 4 6 8 10 12 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Drain current ID (A) PD  Ta 80 Area of safe operation (ASO) 100 240 EAS  Tj Avalanche energy capacity EAS (mJ) ID=8A VDD=50V 200 Allowable power dissipation PD (W) 70 60 50 40 (1) TC=Ta (2) Without heat sink (PD=2.0W) 30 IDP 10 3 ID Non repetitive pulse TC=25˚C Drain current ID (A) t=1ms DC 160 1 0.3 0.1 0.03 120 (1) 30 20 10 (2) 0 0 20 40 60 80 100 120 140 160 10ms 80 40 0.01 1 3 10 30 100 300 1000 0 25 50 75 100 125 150 175 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Junction temperature Tj (˚C) 2 .


BD809 K1606 DFP2N60


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