Document
Power F-MOS FETs
2SK1606
www.DataSheet4U.com Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic
unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
s Applications
16.7±0.3
7.5±0.2
q High-speed switching (switching power supply) q For high-frequency power amplification
φ3.1±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±8 ±16 130 50 2 150 −55 to +150 Unit V V A A mJ
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5 +0.2 –0.1 0.8±0.1
2.54±0.25 5.08±0.5
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25°C Ta = 25°C
1
2
W °C °C
1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a)
3
Single pulse
s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.1mH, ID = 8A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A VDS = 20V, VGS = 0, f = 1MHz 3 450 130 1 0.56 5 1300 160 70 VGS = 10V, ID = 4A VDD = 150V, RL = 37.5Ω 70 50 150 5 0.75 min typ max 0.1 ±1 Unit mA µA V mJ V Ω S pF pF pF ns ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time)
*
Avalanche energy capacity test circuit
L ID Gate VDS Drain Source C VDD
PVS
RGS
1
Power F-MOS FETs
ID VDS
16 14 12 10 8 6V 6 4 2 0 0 10 20 PD=50W 30 40 50 60 5.5V 10
2SK1606
| Yfs | ID
Drain to source ON-resistance RDS(on) (Ω)
1.2 TC=25˚C 1.0
RDS(on) ID
VDS=25V TC=25˚C
VGS=8V
Forward transfer admittance |Yfs| (S)
15V 10V
www.DataSheet4U.com
TC=25˚C
8
Drain current ID (A)
7V
0.8
6
VGS=10V 15V
0.6
4
0.4
2
0.2
5V
0 0 4 8 12 16 20 24
0 0 4 8 12 16 20 24
Drain to source voltage VDS (V)
Drain current ID (A)
Drain current ID (A)
ID VGS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 VDS=25V TC=25˚C 10000
Ciss, Coss, Crss VDS
TC=25˚C 600
ton, tf, td(off) ID
VDD=150V VGS=10V TC=25˚C
Switching time ton,tf,td(off) (ns)
3000 Ciss
500
Drain current ID (A)
1000
400
300
300
100 Coss 30 Crss
200 td(off) 100 ton tf
10 0 40 80 120 160 200 240
0 0 2 4 6 8 10 12
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
Drain current ID (A)
PD Ta
80
Area of safe operation (ASO)
100 240
EAS Tj
Avalanche energy capacity EAS (mJ)
ID=8A VDD=50V 200
Allowable power dissipation PD (W)
70 60 50 40
(1) TC=Ta (2) Without heat sink (PD=2.0W)
30 IDP 10 3 ID
Non repetitive pulse TC=25˚C
Drain current ID (A)
t=1ms DC
160
1 0.3 0.1 0.03
120
(1) 30 20 10 (2) 0 0 20 40 60 80 100 120 140 160
10ms
80
40
0.01 1 3 10 30 100 300 1000
0 25
50
75
100
125
150
175
Ambient temperature Ta (˚C)
Drain to source voltage VDS (V)
Junction temperature Tj (˚C)
2
.