Document
www.DataSheet4U.com
DFB7N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
N-Channel MOSFET
{
High ruggedness RDS(on) (Max 1.0 Ω )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
◀
2. Drain
BVDSS = 600V
●
▲
● ●
RDS(ON) = 1.0 ohm ID = 7.4A
3. Source
{
General Description
This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
TO-263 (D2-Pak)
2
1
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
600 7.4 4.6 30
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
560 14 4.5 140 1.14 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
0.88 62.5
Units
°C/W °C/W °C/W
FEB, 2005. Rev. 0. Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
1/7
www.DataSheet4U.com
DFB7N60
Electrical Characteristics
Symbol Off Characteristics
BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 600V, VGS = 0V VDS = 480V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 4.5A 600 0.68 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.85 4.0 1 V Ω
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 820 140 43 980 170 50 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =7.4A ※ see fig. 12.
(Note 4, 5)
VDD =300V, ID =7.4A, RG =25Ω ※ see fig. 13.
(Note 4, 5)
32 85 70 65 48 6.8 25
70 160 145 120 55 nC ns
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr ※ NOTES
1. Repeativity rating : pulse width limited by junction temperature 2. L = 22.3mH, IAS =7.40A, VDD = 50V, RG = 50Ω , Starting TJ = 25°C 3. ISD ≤ 7.4A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature.
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =7.4.0A, VGS =0V IS=7.4A, VGS=0V, dIF/dt=100A/us
Min.
-
Typ.
400 2.9
Max.
7.4 30 1.4 -
Unit.
A V ns uC
2/7
www.DataSheet4U.com
DFB7N60
Fig 1. On-State Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Fig 2. Transfer Characteristics
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
10
0
150 C
10
0
o
25 C -55 C
※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test
o
o
10
-1
※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃
-1 0 1
10
10
10
10
-1
2
3
4
5
6
7
8
9
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
2.5
Fig 4. On State Current vs. Allowable Case Temperature
RDS(ON), Drain-Source On-Resistance [Ω ]
1.5
VGS = 10V
IDR, Reverse Drain Current [A]
2.0
10
1
150℃
25℃
1.0
VGS = 20V
0.5
※ Note : TJ = 25℃
10
0
※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test
0.0
0
5
10
15
20
25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Fig 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
1000
VDS = 120V
10
Capacitance [pF]
Ciss
750
※ Notes : 1. VGS = 0V 2. f=1MHz
VDS = 300V VDS = 480V
8
Coss
500
6
Crss
250
4
2
※ Note : ID = 7.4 A
0
0
5
10
15
20
25
30
35
40
0
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3/7
www.DataSheet4U.com
DFB7N60
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
1.2
3.0
Fig 8. On-Resistance Variation vs. Junction Temper.