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DFB7N60 Dataheets PDF



Part Number DFB7N60
Manufacturers DnI
Logo DnI
Description N-Channel MOSFET
Datasheet DFB7N60 DatasheetDFB7N60 Datasheet (PDF)

www.DataSheet4U.com DFB7N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 1.0 Ω )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V ● ▲ ● ● RDS(ON) = 1.0 ohm ID = 7.4A 3. Source { General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, esp.

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www.DataSheet4U.com DFB7N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 1.0 Ω )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V ● ▲ ● ● RDS(ON) = 1.0 ohm ID = 7.4A 3. Source { General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. TO-263 (D2-Pak) 2 1 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 7.4 4.6 30 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 560 14 4.5 140 1.14 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.5 - Max. 0.88 62.5 Units °C/W °C/W °C/W FEB, 2005. Rev. 0. Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved. 1/7 www.DataSheet4U.com DFB7N60 Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 600V, VGS = 0V VDS = 480V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 4.5A 600 0.68 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.85 4.0 1 V Ω Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 820 140 43 980 170 50 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =7.4A ※ see fig. 12. (Note 4, 5) VDD =300V, ID =7.4A, RG =25Ω ※ see fig. 13. (Note 4, 5) 32 85 70 65 48 6.8 25 70 160 145 120 55 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 22.3mH, IAS =7.40A, VDD = 50V, RG = 50Ω , Starting TJ = 25°C 3. ISD ≤ 7.4A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =7.4.0A, VGS =0V IS=7.4A, VGS=0V, dIF/dt=100A/us Min. - Typ. 400 2.9 Max. 7.4 30 1.4 - Unit. A V ns uC 2/7 www.DataSheet4U.com DFB7N60 Fig 1. On-State Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Fig 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 10 0 150 C 10 0 o 25 C -55 C ※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test o o 10 -1 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 0 1 10 10 10 10 -1 2 3 4 5 6 7 8 9 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 2.5 Fig 4. On State Current vs. Allowable Case Temperature RDS(ON), Drain-Source On-Resistance [Ω ] 1.5 VGS = 10V IDR, Reverse Drain Current [A] 2.0 10 1 150℃ 25℃ 1.0 VGS = 20V 0.5 ※ Note : TJ = 25℃ 10 0 ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0.0 0 5 10 15 20 25 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD, Source-Drain voltage [V] Fig 5. Capacitance Characteristics Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Fig 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 1000 VDS = 120V 10 Capacitance [pF] Ciss 750 ※ Notes : 1. VGS = 0V 2. f=1MHz VDS = 300V VDS = 480V 8 Coss 500 6 Crss 250 4 2 ※ Note : ID = 7.4 A 0 0 5 10 15 20 25 30 35 40 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3/7 www.DataSheet4U.com DFB7N60 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 3.0 Fig 8. On-Resistance Variation vs. Junction Temper.


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