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DFF7N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 1.0 )@VGS=10V 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 1.0 ohm ID = 7.4A
3. Source
Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F( Isolated ) pkg is well suited for adaptor power unit and small power inverter application.
TO-220F
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) * Continuous Drain Current(@TC = 100°C) * Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
600 7.4 4.6 30
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
560 4.8 4.5 48 0.38 - 55 ~ 150 300
* Ensure that the channel temperature does not exceed 150°C
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
-
Max.
2.6 62.5
Units
°C/W °C/W
Mar, 2005. Rev. 0. Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
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DFF7N60
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 600V, VGS = 0V VDS = 480V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 4.5A 600 0.68 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.85 4.0 1 V
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 820 140 43 980 170 50 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =7.4A see fig. 12.
(Note 4, 5)
VDD =300V, ID =7.4A, RG =25 see fig. 13.
(Note 4, 5)
32 85 70 65 48 6.8 25
70 160 145 120 55 nC ns
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =7.4.0A, VGS =0V IS=7.4A, VGS=0V, dIF/dt=100A/us
Min.
-
Typ.
400 2.9
Max.
7.4 30 1.4 -
Unit.
A V ns uC
NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 22.3mH, IAS =7.40A, VDD = 50V, RG = 50 , Starting TJ = 25°C 7.4A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C 3. ISD 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature.
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DFF7N60
Fig 1. On-State Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Fig 2. Transfer Characteristics
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
10
0
150 C
10
0
o
25 C -55 C
Notes : 1. VDS = 50V 2. 250µ s Pulse Test
o
o
10
-1
Notes : 1. 250µ s Pulse Test 2. TC = 25
-1 0 1
10
10
10
10
-1
2
3
4
5
6
7
8
9
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
2.5
Fig 4. On State Current vs. Allowable Case Temperature
RDS(ON), Drain-Source On-Resistance [Ω ]
1.5
VGS = 10V
IDR, Reverse Drain Current [A]
2.0
10
1
150
25
1.0
VGS = 20V
0.5
Note : TJ = 25
10
0
Notes : 1. VGS = 0V 2. 250µ s Pulse Test
0.0
0
5
10
15
20
25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Fig 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
1000
VDS = 120V
10
Capacitance [pF]
Ciss
750
Notes : 1. VGS = 0V 2. f=1MHz
VDS = 300V VDS = 480V
8
Coss
500
6
Crss
250
4
2
Note : ID = 7.4 A
0
0
5
10
15
20
25
30
35
40
0
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
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DFF7N60
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
1.2
3.0
Fig.