DatasheetsPDF.com

DFF7N60 Dataheets PDF



Part Number DFF7N60
Manufacturers DnI
Logo DnI
Description N-Channel MOSFET
Datasheet DFF7N60 DatasheetDFF7N60 Datasheet (PDF)

www.DataSheet4U.com DFF7N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 1.0 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 1.0 ohm ID = 7.4A 3. Source Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimi.

  DFF7N60   DFF7N60


Document
www.DataSheet4U.com DFF7N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 1.0 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 1.0 ohm ID = 7.4A 3. Source Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F( Isolated ) pkg is well suited for adaptor power unit and small power inverter application. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) * Continuous Drain Current(@TC = 100°C) * Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 7.4 4.6 30 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 560 4.8 4.5 48 0.38 - 55 ~ 150 300 * Ensure that the channel temperature does not exceed 150°C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min. - Typ. - Max. 2.6 62.5 Units °C/W °C/W Mar, 2005. Rev. 0. Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved. 1/7 www.DataSheet4U.com DFF7N60 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 600V, VGS = 0V VDS = 480V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 4.5A 600 0.68 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.85 4.0 1 V Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 820 140 43 980 170 50 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =7.4A see fig. 12. (Note 4, 5) VDD =300V, ID =7.4A, RG =25 see fig. 13. (Note 4, 5) 32 85 70 65 48 6.8 25 70 160 145 120 55 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =7.4.0A, VGS =0V IS=7.4A, VGS=0V, dIF/dt=100A/us Min. - Typ. 400 2.9 Max. 7.4 30 1.4 - Unit. A V ns uC NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 22.3mH, IAS =7.40A, VDD = 50V, RG = 50 , Starting TJ = 25°C 7.4A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C 3. ISD 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature. 2/7 www.DataSheet4U.com DFF7N60 Fig 1. On-State Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Fig 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 10 0 150 C 10 0 o 25 C -55 C Notes : 1. VDS = 50V 2. 250µ s Pulse Test o o 10 -1 Notes : 1. 250µ s Pulse Test 2. TC = 25 -1 0 1 10 10 10 10 -1 2 3 4 5 6 7 8 9 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 2.5 Fig 4. On State Current vs. Allowable Case Temperature RDS(ON), Drain-Source On-Resistance [Ω ] 1.5 VGS = 10V IDR, Reverse Drain Current [A] 2.0 10 1 150 25 1.0 VGS = 20V 0.5 Note : TJ = 25 10 0 Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0.0 0 5 10 15 20 25 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD, Source-Drain voltage [V] Fig 5. Capacitance Characteristics Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Fig 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 1000 VDS = 120V 10 Capacitance [pF] Ciss 750 Notes : 1. VGS = 0V 2. f=1MHz VDS = 300V VDS = 480V 8 Coss 500 6 Crss 250 4 2 Note : ID = 7.4 A 0 0 5 10 15 20 25 30 35 40 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3/7 www.DataSheet4U.com DFF7N60 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 3.0 Fig.


DFB7N60 DFF7N60 DFF4N60


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)