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DFF4N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate {
{ {
N-Chann...
www.DataSheet4U.com
DFF4N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A
3. Source
Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel enhancement mode field-effect power
transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F( Isolated ) pkg is well suited for adaptor power unit and power inverter application.
TO-220F
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C)* Continuous Drain Current(@TC = 100°C)* Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
600 4 2.5 16
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
262 3.3 4.5 33 0.26 - 55 ~ 150 300
* Ensure that the channel temperature does not exceed 150
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-A...