DFP730

www.DataSheet4U.com DFP730 N-Channel MOSFET Features ■ ■ ■ ■ ■ 2.Drain RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 1.Gate BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast . TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 400 6.5 2.9 26 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 470 9.8 5.3 98 0.78 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Oct, 2004. Rev. 0. Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved. Parameter Thermal Resistance, Junction-to-Case Thermal Res...