www.DataSheet4U.com
DFP630
N-Channel MOSFET
Features
RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/...
www.DataSheet4U.com
DFP630
N-Channel MOSFET
Features
RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.Drain
BVDSS = 200V
1.Gate
RDS(ON) = 0.4 ohm ID = 9A
3.Source
General Description
This N-channel enhancement mode field-effect power
transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. The TO-220 pkg is well suited for DC-DC converter and SCorrection in color-monitor system.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
200 9 5.8 36
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
180 7.8 5.5 78 0.62 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Oct, 2004. Rev. 0.
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
T...