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DFF30N06 Dataheets PDF



Part Number DFF30N06
Manufacturers DnI
Logo DnI
Description N-Channel MOSFET
Datasheet DFF30N06 DatasheetDFF30N06 Datasheet (PDF)

www.DataSheet4U.com DFF30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.04 ohm ID = 30A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-D.

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www.DataSheet4U.com DFF30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.04 ohm ID = 30A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 3) (Note 1) Parameter Value 60 21 14.9 84 ±20 430 7.0 39 0.26 - 55 ~ 175 300 Units V A A A V mJ V/ns W W/°C °C °C Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.5 - Max. 3.85 62.5 Units °C/W °C/W °C/W May, 2006. Rev.0. Copyright@ D&I Semiconductor Co., Ltd., All rights reserved. 1/7 www.DataSheet4U.com DFF30N06 Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Zero Gate Voltage Drain Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 60V, VGS = 0V VDS = 48V, TC = 150 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 10.5A 60 0.062 1 10 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.029 4.0 0.04 V Ω Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 930 290 75 1210 380 100 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =48V, VGS =10V, ID =30A ※ see fig. 12. (Note 4, 5) VDD =30V, ID =15A, RG =50Ω ※ see fig. 13. (Note 4, 5) 15 25 60 40 27 6.2 11.1 40 60 130 90 35 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 560uH, IAS =30A, VDD = 25V, RG = 0Ω , Starting TJ = 25°C 3. ISD ≤ 30A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =21A, VGS =0V IS=30A,VGS=0V,dIF/dt=100A/us Min. - Typ. 45 65 Max. 21 84 1.5 - Unit. A V ns nC 2/7 www.DataSheet4U.com DFF30N06 Fig 1. On-State Characteristics 2 Fig 2. Transfer Characteristics 10 2 10 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 1 175 C 25 C -55 C o o o ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 25V 2. 250µ s Pulse Test 10 -1 10 0 10 0 10 1 10 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 100 10 2 Fig 4. On State Current vs. Allowable Case Temperature RDS(ON), Drain-Source On-Resistance[mΩ ] VGS = 10V 60 VGS = 20V 40 IDR, Reverse Drain Current[A] 80 10 1 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 20 ※ Note : TJ = 25℃ 0 0 20 40 60 80 100 120 140 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage[V] Fig 5. Capacitance Characteristics 2000 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Fig 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 10 VDS = 30V VDS = 48V 1500 Capacitance [pF] 1000 Ciss ※ Notes : 1. VGS = 0V 2. f=1MHz 8 6 500 Coss Crss 4 2 ※ Note : ID = 30.0 A 0 0 5 10 15 20 25 30 35 0 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC] 3/7 www.DataSheet4U.com DFF30N06 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 3.0 Fig 8. On-Resistance Variation vs. Junction Temperature BVDSS,.


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