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DFF30N06
N-Channel MOSFET
Features
■ ■ ■ ■ ■ ■
Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range
2.Drain
BVDSS = 60V
1.Gate 3.Source
RDS(ON) = 0.04 ohm ID = 30A
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
TO-220F
1
2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 3) (Note 1)
Parameter
Value
60 21 14.9 84 ±20 430 7.0 39 0.26 - 55 ~ 175 300
Units
V A A A V mJ V/ns W W/°C °C °C
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
3.85 62.5
Units
°C/W °C/W °C/W
May, 2006. Rev.0.
Copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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DFF30N06
Electrical Characteristics
Symbol Off Characteristics
BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Zero Gate Voltage Drain Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 60V, VGS = 0V VDS = 48V, TC = 150 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 10.5A 60 0.062 1 10 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.029 4.0 0.04 V Ω
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 930 290 75 1210 380 100 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =48V, VGS =10V, ID =30A ※ see fig. 12.
(Note 4, 5)
VDD =30V, ID =15A, RG =50Ω ※ see fig. 13.
(Note 4, 5)
15 25 60 40 27 6.2 11.1
40 60 130 90 35 nC ns
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr ※ NOTES
1. Repeativity rating : pulse width limited by junction temperature 2. L = 560uH, IAS =30A, VDD = 25V, RG = 0Ω , Starting TJ = 25°C 3. ISD ≤ 30A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature.
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =21A, VGS =0V IS=30A,VGS=0V,dIF/dt=100A/us
Min.
-
Typ.
45 65
Max.
21 84 1.5 -
Unit.
A V ns nC
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DFF30N06
Fig 1. On-State Characteristics
2
Fig 2. Transfer Characteristics
10
2
10
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
1
175 C 25 C -55 C
o o
o
※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃
※ Notes : 1. VDS = 25V 2. 250µ s Pulse Test
10 -1 10
0
10
0
10
1
10
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
100 10
2
Fig 4. On State Current vs. Allowable Case Temperature
RDS(ON), Drain-Source On-Resistance[mΩ ]
VGS = 10V
60
VGS = 20V
40
IDR, Reverse Drain Current[A]
80
10
1
175℃ 25℃
※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test
20
※ Note : TJ = 25℃
0
0
20
40
60
80
100
120
140
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage[V]
Fig 5. Capacitance Characteristics
2000
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Fig 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
10
VDS = 30V VDS = 48V
1500
Capacitance [pF]
1000
Ciss
※ Notes : 1. VGS = 0V 2. f=1MHz
8
6
500
Coss Crss
4
2
※ Note : ID = 30.0 A
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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DFF30N06
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
1.2
3.0
Fig 8. On-Resistance Variation vs. Junction Temperature
BVDSS,.