D2P6M

www.DataSheet4U.com D2P6M Sensitive Gate Silicon Controlled Rectifiers Features 1.Cathode Symbol 2. Anode BVDRM = 600V IT(RMS) = 2.0 A 3.Gate ITSM = 4 A Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 2.0 A ) On-State Voltage (2.2V(max) @ ITM= 4A) Pb - Free Packages are Available TO-126 General Description Sensitive-gate triggering thyristor is suitable for the application where requiring low gate triggerring current system Used for electric blanket ,electronic jar ,temperature control,lighting control such as a entertainment display. Automatic ignition system , Battery charger . 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =77 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TC= 77 °C, pulse width TC =77°C,pulse width TC =77 °C, pulse width TC= 77 °C, pulse width 1.0 1.0 1.0 1.0 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 600 2.0 4 20 1.65 0.5 0.1 0.2 5.0 - 40 ~ 125 - 40 ~ 125 Units V A A A A 2s W W A V °C °C April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. ...