MCR100-6A

www.DataSheet4U.com MCR100-6A Sensitive Gate Silicon Controlled Rectifiers Features 2.Gate Symbol 3. Anode BVDRM = 600V IT(RMS) = 0.8 A ITSM = 10 A Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 0.8 A ) Low On-State Voltage (1.2V(Typ.)@ ITM) Pb - Free Packages are available 1.Cathode TO-92 General Description Sensitive-gate triggering thyristor is suitable for the application where gate current limited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC = 74 °C all conduction angle 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms t = 8.3ms TA = 25 °C, pulse width TA = 25 °C, t = 8.3ms TA = 25 °C, pulse width TA = 25 °C, pulse width 1.0 1.0 1.0 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 600 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 125 Units V A A A A2 s W W A V °C °C April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. 1/5 www.DataSheet4U.com MCR100-6A Electrical Characteristics Symbol Items...