Standard Gate SCR
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MCR100-6A
Sensitive Gate Silicon Controlled Rectifiers
Features
2.Gate
Symbol
3. Anode
BVDRM = 60...
Description
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MCR100-6A
Sensitive Gate Silicon Controlled Rectifiers
Features
2.Gate
Symbol
3. Anode
BVDRM = 600V IT(RMS) = 0.8 A ITSM = 10 A
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 0.8 A ) Low On-State Voltage (1.2V(Typ.)@ ITM) Pb - Free Packages are available
1.Cathode
TO-92
General Description
Sensitive-gate triggering thyristor is suitable for the application where gate current limited such as small motor control, gate driver for large thyristor, sensing and detecting circuits.
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
sine wave,50 to 60Hz,gate open half sine wave : TC = 74 °C all conduction angle 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms t = 8.3ms TA = 25 °C, pulse width TA = 25 °C, t = 8.3ms TA = 25 °C, pulse width TA = 25 °C, pulse width 1.0 1.0 1.0
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 125
Units
V A A A A2 s W W A V °C °C
April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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MCR100-6A
Electrical Characteristics
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