DBT137F-600

www.DataSheet4U.com DBT137F-600 UL No. E256958 Triac / Sensitive Gate Symbol 2.T2 Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 8 A ) High Commutation dv/dt Sensitive Gate Triggering 3 Mode ( IGT = 10mA) Isolation Voltage ( VISO = 2500V AC ) 3.Gate 1.T1 BVDRM = 600V IT(RMS) = 8 A ITSM = 77 A TO-220F General Description This device is fully isolated package suitable for sensitive gate triggering , direct coupling to TTL, HTL, CMOS and application such as various logic functions,medium power AC switching applications, such as fan speed control, lighting controllers and home appliance equipment. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz,Gate Open TC = 76 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =76 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C A.C. 1 minute 1.0us Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Ratings 600 8.0 70/77 24 5.0 0.5 2.0 10 2500 - 40 ~ 125 - 40 ~ 150 Units V A A A2 s W W A V V °C °C July, 2005. Rev. 1 copyright@ D&I Semiconductor Co., Ltd., All rights reserved. 1/6 www.DataSheet4U.com DBT137F-600 El...