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DBT138-600
Triac / Sensitive Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) High Commutation dv/dt Sensitive Gate Triggering 3 Mode ( IGT = 10mA) Non-isolated Type
2.T2
BVDRM = 600V IT(RMS) = 12 A
3.Gate
1.T1
ITSM = 110 A TO-220
General Description
This device is sensitive gate triggering triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions,medium power AC switching applications, such as fan speed control, lighting controllers and home appliance equipment.
1 2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz,Gate Open TC = 85 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =85 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C 1.0us
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 12 100/110 50 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150
Units
V A A A2 s W W A V °C °C
July, 2005. Rev. 1 copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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DBT138-600
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 15 A, Inst. Measurement
Ratings Min. Typ. Max.
2.0 1.65 10 10
Unit
IDRM VTM I+GT1 I -GT1
mA V
Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) IV Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Thermal Impedance IV
VD = 6 V, RL=10 10 25 1.5 1.5 VD = 6 V, RL=10 1.5 2.5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM 0.2 10 15 Junction to case (Half Cycle ) Junction to ambient ( Free Air ) 2.0 60
mA
V
V
V/
mA °C/W °C/W
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DBT138-600
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
0
10
1
TJ = 125 C
o
IGM (2A)
TJ = 25 C
10
0
o
10
-1
VGD (0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
20 18
130
Fig 4. On State Current vs. Allowable Case Temperature
Allowable Case Temperature [ oC]
o o o
θ = 180
2
120 110 100 90
2
Power Dissipation [W]
16 14 12 10 8 6 4 2 0 0 3
360°
θ = 150 θ = 120 o θ = 90 θ = 60 θ = 30
o o
: Conduction Angle
θ = 30 θ = 60 θ θ θ θ
7 8 9 10 11 12
o o o
80 70 60 50
360°
: Conduction Angle
= 90 o = 120 o = 150 o = 180
13 14 15
6
9
12
15
0
1
2
3
4
5
6
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
120
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
100
Surge On-State Current [A]
80
o
60Hz
60
VGT (25 C)
VGT (t C)
o
1
40
50Hz
20
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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DBT138-600
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I I
+ GT1 _ GT1
Transient Thermal Impedance [ C/W]
IGT (t C) o IGT (25 C)
o
o
1
I
_ GT3
0.1 -50
0
50
100
o
150
0.1 -2 10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
6V
V
A
6V
A V
6V
A V
RG
RG
RG
Test Procedure
Test Procedure
Test Procedure
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DBT138-600
TO-220 Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
E B
A
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
5/5 5/
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