BC108C

BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V (BC107) ICBO VCB=45V, TA=125°C (BC107) ICBO VCB=25V (BC108, BC109) ICBO VCB=25V, TA=125°C (BC108, BC109) BVCEO IC=2.0mA (BC107) 45 BVCEO IC=2.0mA (BC108, BC109) 25 BVEBO IE=10μA (BC107) 6.0 BVEBO IE=10μA (BC108, BC109) 5.0 VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=10mA, IB=0.5mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.55 VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40 hFE VCE=5.0V, IC=10μA (BC108C, BC109C) 100 hFE VCE=5.0V, IC=2.0mA (BC107) 110 hFE VCE=5.0V, IC=2.0mA (BC107A) 110 hFE VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200 hFE VCE=5.0V, IC=2.0mA (BC108C, BC109C) 420 TYP MAX 15 4.0 15 4.0 0.25 0.6 0.7 0.83 1....