LP0701

Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► Ultra-low threshold ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low on-resistance ► Freedom from secondary breakdown ► Low input and output leakage Applications ► Logic level interfaces ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications. Ordering Information Device Package Options 8-Lead SOIC (Narrow Body) TO-92 LP0701 LP0701LG-G -G indicates package is RoHS compliant (‘Green’) LP0701N3-G BVDSS/BVDGS (V) -16.5 RDS(ON) (Ω) 1.5 VGS(TH) (max) (V) -1.0 ID(ON) (min) (A) -1.25 Pin Configurations Absolute Maximum Ratings Parameter Value Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage BVDSS BVDGS ±10V Operating and storage temperature -55°C to +150°C Soldering temperature* ...