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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
1...
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate
Transistors
TO-92L
1. EMITTER
2SB892
TRANSISTOR (
PNP)
FEATURE z Power supplies, relay drivers, lamp drivers, and automotive wiring z Low saturation voltage. z Large current capacity and wide ASO.
2. COLLECTOR 3. BASE
123
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Parameter Value -60 -50 -6 -2 0.75 150 -55-150 Units V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat)
unless
Test
otherwise
conditions
specified)
MIN -60 -50 -6 -0.1 -0.1 100 40 -0.4 -1.2 150 V V MHz 560 MAX UNIT V V V μA μA
IC= -100μA , IE=0 IC= -1mA , IB=0 IE=- 100μA, IC=0 VCB= -50V , VEB= -4V , VCE=-2V, VCE=-2V, IE=0 IC=0 IC= -100mA IC= -1.5A
IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCE= -10 V, IC= -50mA
fT
CLASSIFICATION OF hFE(1)
Rank Range R 100-200 S 140-280 T 200-400 U 280-560
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Typical characteristics
2SB892
...