LP1500SOT2231

Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP VIEW) DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also features Si3N4 passivation and is available in a die form or in a flanged ceramic package (P100) for high-power applications, or in the SOT-89 plastic package. Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. PERFORMANCE SPECIFICATIONS (TA = 25°C) SYMBOLS IDSS P1dB G1dB NF IP3 IMAX GM VP IGSO BVGS BVGD LP1500-SOT223-1 BLUE LP1500-SOT223-2 GREEN LP1500-SOT223-3 RED Output Power at 1dB Gain Compression f = 1800 Mhz VDS = 3.3V, IDS = 33% IDSS Power Gain at 1dB Gain Compression f = 1800...