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MS808C06 (30A)
SCHOTTKY BARRIER DIODE
9.0±0.2 7.0±0.2 4
0.6±0.2 0.1
(60V / 30A )
Outline drawings,...
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MS808C06 (30A)
SCHOTTKY BARRIER DIODE
9.0±0.2 7.0±0.2 4
0.6±0.2 0.1
(60V / 30A )
Outline drawings, mm
10.1±0.3
9.0±0.2
Solder Plating
2.0 1.5
2.0
2.5
0.5±0.2
(5.8)
1 1.0±0.2 1.0±0.2
2
3
0.4±0.1
3.6±0.2
Features
Low VF Super high speed switching High reliability by planer design
2.8±0.2
(4.0) (0.8)
(3.2)
Connection diagram
Applications
High speed power switching
1 2 4 3
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=118°C Sine wave 10ms Conditions Rating 60 60 30* 200 -40 to +150 -40 to +150 Unit V V A A °C °C
* Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=12.5A VR=VRRM Junction to case Max. 0.58 20 1.2 Unit V mA °C/W
(2.2) (2.1)
(10.1)
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(60V / 30A )
Characteristics
Forward Characteristic
100
TS808C06 (30A)
(typ.)
Reverse Characteristic (typ.)
Tj=150 C 10
2
o
Tj=125 C
10
1
o
(mA)
10
Tj=100 C
o
Tj=125
1
o
C C
Reverse Current
Tj=150
o
C
(A)
10
0
Forward Current
Tj=100 Tj=25
o
o
C
10
-1
IR
0.1
Tj= 25 C 10
-2
o
IF
0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1...
