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1H0265R Dataheets PDF



Part Number 1H0265R
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description KA1H0265R
Datasheet 1H0265R Datasheet1H0265R Datasheet (PDF)

www.DataSheet4U.com www.fairchildsemi.com KA1M0265R/KA1H0265R Fairchild Power Switch(FPS) Features • • • • • • • • • Precision Fixed Operating Frequency KA1M0265R (70kHz) , KA1H0265R (100kHz) Pulse by Pulse Over Current Limiting Over Load Protection Over Voltage Protection (Min. 23V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto Restart Description The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with min.

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www.DataSheet4U.com www.fairchildsemi.com KA1M0265R/KA1H0265R Fairchild Power Switch(FPS) Features • • • • • • • • • Precision Fixed Operating Frequency KA1M0265R (70kHz) , KA1H0265R (100kHz) Pulse by Pulse Over Current Limiting Over Load Protection Over Voltage Protection (Min. 23V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto Restart Description The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. TO-220F-4L 1 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5V Vref Good logic OSC 9V 5µA #4 FB 2.5R 1R + 7.5V − + 25V − Thermal S/D OVER VOLTAGE S/D 1mA − + S R L.E.B 0.1V S R Q #1 GND Q Internal bias #2 DRAIN SFET Power on reset Rev.1.0.2 ©2003 Fairchild Semiconductor Corporation www.DataSheet4U.com KA1M0265R/KA1H0265R Absolute Maximum Ratings Parameter Maximum Drain Voltage (1) Symbol VD,MAX VDGR VGS IDM EAS ID ID VCC,MAX VFB PD Darting TA TSTG Value 650 650 ±30 8.0 68 2.0 1.3 30 -0.3 to VSD 42 0.33 -25 to +85 -55 to +150 Unit V V V ADC mJ ADC ADC V V W W/°C °C °C Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (2) Single Pulsed Avalanche Energy (3) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Ambient Temperature Storage Temperature Notes: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 51mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C 2 www.DataSheet4U.com KA1M0265R/KA1H0265R Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Condition VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=1.0A VDS=50V, ID=1.0A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=2.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=2.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) Min. 650 1.5 Typ. 5.0 2.5 550 38 17 20 15 55 25 3 12 Max. 50 200 6.0 35 nC nS pF Unit V µA µA Ω Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate Drain (Miller) Charge Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 1 2. S = --R (Note) IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd S 3 www.DataSheet4U.com KA1M0265R/KA1H0265R Electrical Characteristics (Control Part) (Continued) (Ta=25°C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Accuracy Frequency Change With Temperature (2) Maximum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current REFERENCE SECTION Output Voltage (1) Temperature Stability Peak Current Limit PROTECTION SECTION Thermal Shutdown Temperature (Tj) (1) Over Voltage Protection Voltage TOTAL DEVICE SECTION Start-Up Current Operating Supply Current (Control Part Only) VCC Zener Voltage ISTART IOP VZ VCC=14V Ta=25°C ICC=20mA 0.1 6 30 0.3 12 32.5 0.4 18 35 mA mA V TSD VOVP 140 23 160 25 28 °C V (1)(2) Symbol VSTART VSTOP Condition After turn on KA1M0265R KA1H0265R -25°C ≤ Ta ≤ +85°C KA1M0265R KA1H0265R Ta=25°C, 0V ≤ Vfb ≤ 3V Ta=25°C, 5V ≤ Vfb ≤ VSD Ta=25°C -25°C ≤ Ta ≤ +85°C Max. inductor current Min. 14 9 61 90 74 64 0.7 6.9 4.0 4.80 1.05 Typ. 15 10 67 100 ±5 77 67 0.9 7.5 5.0 5.00 0.3 1.2 Max. 16 11 73 110 ±10 80 70 1.1 8.1 6.0 5.20 0.6 1.35 Unit V V FOSC ∆F/∆T Dmax kHz % % IFB VSD Idelay Vref Vref/∆T IOVER mA V µA V mV/°C A CURRENT LIMIT (SELF-PROTECTION) SECTION Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 www.DataSheet4U.com KA1M0265R/KA1H0265R Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25°C).


MGDSI-20-Q-F 1H0265R DH110


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