MWI50-12E7

www.DataSheet4U.com MWI 50-12 E7 MKI 50-12 E7 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 1 2 5 6 9 10 16 15 14 3 4 17 11 12 13 1 2 9 10 16 14 IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 1.9 V 3 4 17 7 8 11 12 MWI MKI IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C SCSOA; non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 90 62 100 VCES 10 350 V V A A A µs W Features NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate - UL registered, E 72873 Typical Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.1 4.5 0.8 200 80 50 680 30 6.0 4.0 3.8 350 2.4 6.5 0.8 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.35 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG...