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Semiconductor
STC4250F
NPN Silicon Transistor
Applications
• Power amplifier application • High c...
www.DataSheet4U.com
Semiconductor
STC4250F
NPN Silicon
Transistor
Applications
Power amplifier application High current switching application
Features
Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=2A Small and compact SMD type package Complementary pair with STA3250F
Ordering Information
Type NO. STC4250F Marking HW2 Package Code SOT-89
Outline Dimensions
3.70~4.30 1.15 Typ. 2.40~2.70 1.20 Max.
unit : mm
3
4.40~4.70 1.87 Max.
4
2
0.58 Max.
1
0.48 Max.
1.40~1.70
1.15 Typ.
0.10 Max.
KSD-T5B007-000
0.46 Max.
PIN Connections 1. Base 2,4. Collector 3. Emitter
1
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STC4250F
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO IC PC PC※ TJ Tstg
2
Rating
50 50 5 2 0.5 1 150 -55~150
[Ta=25℃] Unit
V V V A W W °C °C
※ Device mounted on ceramic substrate (250mm ⅹ0.8t)
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on Time Switching Time Storage Time Fall Time
Symbol
BVCEO ICBO IEBO hFE hFE VCE(sat) VBE(sat) fT Cob ton tstg tf
Test Condition
IC=10mA, IB=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A...